发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To shorten a test time with serial operation by providing a parallel input/output terminal inputting and outputting data for test. SOLUTION: A control terminal 310 is made a low level, a control signal is inputted to a switching control circuit 301. When the control terminal 310 is made a low level, the output of an AND gate 401 is made a low level independently of an output signal of an input/output control circuit 203. Also, the output of an inverter 402 is made a high level. Then, the output side of a buffer 404 is made high impedance. Next, a memory to be tested is selected by inputting a selection signal selecting memories 101-1 to 4 to chip selection signals 312-1 to 4. And a test is performed by inputting directly parallel data to the memories 101-4 to 4 through terminals for test 311-1 to 4. Also, an inverter may be arranged between a control terminal of the switching control circuit 301 and an input terminal of the AND gate 401, a device is made a test mode even when the terminal 310 is a high level.
申请公布号 JP2001043700(A) 申请公布日期 2001.02.16
申请号 JP19990219188 申请日期 1999.08.02
申请人 FUJITSU LTD 发明人 TANAKA RYUJI
分类号 G06K19/077;G01R31/28;G06K19/07;G11C7/10;G11C29/02;G11C29/48 主分类号 G06K19/077
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