| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the characteristics from deteriorating due to presence of a high interfacial level density. SOLUTION: A metal film of at least one kind of Ti, Ni, W, Mo, Cu, Ag, or Al or a nitride or silicide film 3 thereof is formed on a substrate 1 and then a first Si layer 3 of poly-Si, a second Si layer 4 of poly-Si or microcrystalline Si having the same conductivity as the first Si layer 3 or i type, and a third Si layer 5 of non-single crystal Si having different conductivity from the first Si layer are formed sequentially thereon. In such a method for fabricating a thin film semiconductor device, the first Si layer 3 is formed by a flux method and the second Si layer 4 is formed by a catalytic CVD method.</p> |
