| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device by crystallizing a silicon film using a laser or an equivalent intensive light and through manufacturing by obtaining the silicon film having a proper crystallization. SOLUTION: A cover film formed by such a material having a proper heat conductivity as aluminum nitride is selectively provided on a substrate 101, and further a silicon film 105 is formed. When a laser or an equivalent intensive light is radiated under this condition, a portion near the aluminum nitride films 102 and 103 of the silicon film 105 coagulates immediately by absorbing heat by the aluminum nitride, however speed to coagulate for other parts is slow. As a result, crystallization proceed from aluminum nitride part. Thus the silicon film 105, having superior crystallinity is selectively obtained, and a semiconductor device is manufactured using this film. |
