| 摘要 |
PROBLEM TO BE SOLVED: To increase current density by forming a lower gap layer and / or an upper gap layer with an insulating film having AlN, forming an amorphous intercrystalline phase between a crystalline phase and an amorphous phase, and controlling a peak intensity ratio (002)face/(220)face in the X-ray diffraction to a specified range. SOLUTION: A lower gap layer 2 and an upper gap layer 6 are formed with insulating films such as AlN excellent in thermal conductivity and heat generated from a magneto-resistive element layer 16 is released through the lower gap layer 2 and the upper gap layer 6 to a lower shield layer 1 and an upper shield layer 7. If the lower and upper gap layers 2 and 6 are made of AlN, the (002) face or (220) face of a crystalline phase is preferably oriented in a direction perpendicular to the film surface or further the peak intensity ratio (002) face/(220) face in the X-ray diffraction is preferably more than 0 and 3.5 or less, or more than 9.7 for further enhancing thermal conductivity. |
