发明名称 WIRING STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD OF FORMING WIRING
摘要 PROBLEM TO BE SOLVED: To provide a wiring structure superior resistance to electromigration and can elongate the service life of wiring. SOLUTION: A wiring 13 has a stacked structure, which includes a high fusing point metal layer 14 and an aluminum alloy layer 15 stacked thereon, and in which a compound layer 17 is produced between both these layers. To deter a compound layer 17 produced between the high fusing point metallic layer 14 and the aluminum alloy layer 15 from extending in the direction of elongation of the wiring 13, the high fusing point metal layer 14 is divided in the direction of the elongation of the wiring 13, and a dimension y1 of the interval between these divided high fusing point metal layer sections 14a is set to a value larger than twice the dimension t1 of the thickness of the compound layer 17. This can prevent the compound layers 17 growing between the opposite faces of the high-fusing point metallic sections 14a from continuing to each other.
申请公布号 JP2001044199(A) 申请公布日期 2001.02.16
申请号 JP19990212976 申请日期 1999.07.28
申请人 OKI ELECTRIC IND CO LTD 发明人 NARITA TADASHI;NAKAMURA MAKIKO
分类号 H01L23/52;H01L21/28;H01L21/3205;H01L23/532;(IPC1-7):H01L21/320 主分类号 H01L23/52
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