| 摘要 |
PROBLEM TO BE SOLVED: To provide a method which can form an insulating film, which is ultrathin and is high in electrical reliability and is superior in equality of thickness under the water face, simply without using special facilities or processes. SOLUTION: In this formation method, a silicon oxide film is made on the surface of a silicon wafer by heat-treating the silicon wafer under oxidative atmosphere, using a quick heating and quick cooling device. In this case, a silicon oxide film 15 nm or smaller in thickness is formed, by making the oxidative atmosphere the mixed gas between argon and oxygen, and making the beat treatment of the heat treatment 1,000 deg.C or over.
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