| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial growth device which can control impurity concentration in an epitaxial layer to a low value, without forming CVD films, etc. SOLUTION: An epitaxial growth device 10 is provided with a treatment chamber 12 containing a susceptor 14, on which a wafer W is placed, at least five gas supply ports 22a-22e arranged in parallel with each other in the side section of the chamber 12 so as to supply a process gas to the chamber 12 for growing an epitaxial layer on the surface of the wafer W, and a means 36 which supplies an impurity gas containing impurities to the gas supply ports, other than the outermost gas supply ports 22d and 22e. Since the process gas is supplied only from the outermost ports 22d and 22e, the outermost peripheral section of the wafer W is only doped automatically and the impurity concentration in the epitaxial layer on the whole surface of the wafer W can be suppressed to a low value.
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