| 摘要 |
PROBLEM TO BE SOLVED: To provide an image sensor, in which the capacitance of a photodiode can be increased and the photosensitivity for a short wavelength can be improved, and a method of manufacturing thereof. SOLUTION: A CMOS image sensor contains a plurality of unit pixels, each having a photosensitive region and a peripheral circuit region. This sensor has a first conductivity semiconductor substrate, a gate oxide film and a gate electrode formed on the gate oxide film. The sensor also contains a transistor formed on the peripheral circuit region of the semiconductor substrate, a spacer formed on the sidewall of the gate oxide film and the gate electrode and one part thereof being formed on the photosensitive region, a second conductivity first doping region formed on the photosensitive region and the region reaching an edge of one side of the gate electrode, and a first conductivity second doping region formed on the first doping region and the region reaching the edge of a spacer formed on the photosensitive region.
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