| 摘要 |
PROBLEM TO BE SOLVED: To make a forward voltage low and uniform by making a second III-V compound semiconductor layer and a second light emission transmitting layer a light emitting diode of the same conductivity type. SOLUTION: After the center of an n-type conductivity circular GaP single crystal body forming a second light emission transmitting layer 109 is made to coincide with the center of a lamination structure 20 of a form of a circular wafer and is mounted in parallel to [110] crystal orientation of a second III-V compound semiconductor layer 105, the temperature of the lamination structure 20 is made to rise up to about 250 deg.C from about 80 deg.C in the air. During the temperature rise, a GaP ingot piece is put on an n-type GaP signal-crystal body 109 and a pressure is applied substantially over the entire second light emission transmitting layer 109, almost uniformly in improving adhesion. The laminating structure 20 is held at about 250 deg.C for about 60 minutes and the second light emission transmitting layer 109 is stuck to the second conductivity type III-V compound semiconductor layer 105. |
