| 摘要 |
PROBLEM TO BE SOLVED: To make a forward voltage low and uniform by forming a II-VI compound semiconductor layer in a region, excepting a lower part of a metallic electrode. SOLUTION: A II-VI compound semiconductor layer 106, consisting of Al doped n-type ZnSe, is applied on a surface of an n-type upper clad layer 105. A ZnSe layer 106, existing in a region immediately below a circular metallic electrode laid in an oxide window layer, is selectively removed. After the ZnSe layer 106 is subjected to patterning, a window layer 107 formed of an ITO film is applied on the II-VI compound semiconductor layer 106. A silicon nitride film is deposited on the surface of the window layer 107 as a protective film 108. After the protection film 108 existing in a region where an electrode is to be formed, an Al circular electrode 109 is provided to the region. After gold/zinc alloy is subjected to vacuum deposition over the entire rear of a GaAs substrate 101, alloying treatment is carried out and a P-type ohmic electrode 110 is formed. |
