| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a reflection type liquid crystal display device and an active matrix substrate which requires a small number of photomask processes or film forming processes and which has high reliability of connection at terminals and high display quality and which is provided with an additional capacitance or accumulated capacitance. SOLUTION: In the active matrix equipped with a gate line electrode 2, gate insulating layer 3, semiconductor layer 4, drain line electrode 6, source electrode 7, insulating layer and pixel electrode 16 on an insulating substrate 1, the drain wiring electrode 6 is formed by laminating a metal film and an oxide conductive film. The gate terminal is formed in the film of the same layer of the drain line and is connected to the gate line by using the metal film of the same layer of the pixel electrode 16. When an organic material is used for the insulating layer, a through hole 32 is formed on the semiconductor layer 4 to obtain such a structure that a protective insulating layer 18 is in contact with the layer 4. Thus, the characteristics of a TFT(thin film transistor) can be stabilized.</p> |
