| 摘要 |
PROBLEM TO BE SOLVED: To easily control the deposition of Si nodule in the contact parts of a substrate with wiring metal layers, in a shorter time. SOLUTION: A device, for equivalently evaluating an impurity diffused layer in the constitution of an integrated circuit and the ohmic connection structure of wiring metal layers, is constituted on an Si substrate 1 of a scribed line region A of an Si wafer. A plurality of N-type diffused layers 2 are provided separately from each other, and the layers adjacent to each other through contact holes 4 provided in insulating films 3 on the layers 2 are connected with each other through the first wiring metal layers 5 (Al-Si-Cu alloy layer). Among a plurality of continuously connected constitutions of the layers 5 with the layers 2, the second wiring metal layers 7 are respectively connected with the layers 5 in a zigzag folded-back form through vias 6. An electrode pad 9 is linked with the layers 5, located at the end parts of the plurality of the continuous connection constitutions of the layers 5 with the layers 2, a current is made to flow into the device, and changes in the resistance value of the device are observed.
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