| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an element which exhibits giant magnetoresistance effect based on the principle of tunnel effect by precisely controlling the shapes and sizes of clusters and the distances among the clusters and those among the clusters and electrodes. SOLUTION: Clusters 1, having discoid bodies composed of a fine ferromagnetic component A and having diameter G and thickness T, spherical bodies having diameters G, or GxXGy (Gy>Gx) elliptic bodies are formed on the upper surface of an insulating substrate 2, composed of a nonmagnetic component B by using the molecular beam epitaxy(MBE) and lithography. At formation of the clusters 21, distances (S1 and S4) among the clusters and those (S2 and S3) among the clusters 1 and electrodes are precisely controlled. In order to stabilize the clusters 1, in addition an insulation coating film 3 is formed by thinly depositing an insulating component C by the MBE. Finally, a giant magnetoresistance(GMR) element, the electrical resistance of which drops greatly due to tunnel effect caused by a low magnetic field is manufactured, by forming clusters between electrodes 1 and 2 (10 and 11) by precisely controlling the intervals among the clusters.
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