| 摘要 |
PROBLEM TO BE SOLVED: To relieve the concentration of stress to a semiconductor element when the semiconductor element is incorporated by forming a resin layer having a glass shift point lower than the curing temperature of thermosetting resin with one insulating layer in upper/lower faces in the semiconductor element. SOLUTION: Resist 12 formed of photosensitive resin is applied to a wafer 11 and is exposed/developed. Holes 13 are formed, the holes 13 are filled with conductive paste and metal such as copper is deposited so as to form via posts 14. Resist 12 is peeled off from the wafer 11 and a soft resin layer 15 having a glass shift point lower than the curing temperature of thermosetting resin in an insulating sheet 1 for forming a wiring board is press-fixed to a surface. The resin layer 15 is removed by polishing and the via posts 14 are exposed. The wafer 11 is sliced by individual semiconductor elements and the incorporated semiconductor element C can be obtained. |
