发明名称 ALGAINP LIGHT EMITTING DIODE
摘要 <p>PROBLEM TO BE SOLVED: To impart superior ohmic contact property with an oxide window layer by a method, wherein a downmost layer of an electrode is constituted by a layer containing an oxide of a transition metal, and also the upper most layer of the electrode is constituted by a metal layer. SOLUTION: An n-type ohmic electrode 107 is provide on a window layer 106 provided in an upper part of a lamination structure 30, and a lowermost part 107a joined to a ZnO layer of the ohmic electrode 107 is structured by adhering Ni through vacuum deposition. An Au film is placed on top of the Ni film as an upmost layer 107b by the vacuum deposition. After an electrode material composed of a gold and zinc alloy is adhered on a reverse face of a substrate 101 by the vacuum deposition, it is heated to form a (p) type ohmic electrode 108. In parallel thereto, oxygen diffusing from a zinc oxide layer is made to be absorbed into the Ni film of the lowermost layer 107a, thereby changing it into a NiO film.</p>
申请公布号 JP2001044503(A) 申请公布日期 2001.02.16
申请号 JP19990220592 申请日期 1999.08.04
申请人 SHOWA DENKO KK 发明人 TAKEUCHI RYOICHI;UDAGAWA TAKASHI
分类号 H01L33/14;H01L33/16;H01L33/28;H01L33/30;H01L33/36;H01L33/40;H01L33/62 主分类号 H01L33/14
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