| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a high aspect ratio with respect to an etching mask even when etching is performed under high vacuum by adding a gas containing carbon and fluorine to a hydrogen bromide gas, etc., when an ITO is etched using a plasma of the hydrogen bromide gas, etc. SOLUTION: In a dry etching method wherein hydrogen bromide gas is decomposed by plasma discharge and wherein an ITO is etched using the decomposed hydrogen bromide, a gas containing carbon and fluorine is added to the hydrogen bromide gas. It is preferable that the gas containing carbon and fluorine further includes hydrogen. It is also preferable that the gas containing carbon and fluorine is a gas selected from a gas having a cyclic structure of carbon atoms, a gas having a double bond structure of carbon atoms, and a gas having a triple bond structure of carbon atoms. Since the gas containing carbon and fluorine is added to the hydrogen bromide gas, a protection film is formed on an etching mask, whereby the ITO can be etched with the etching mask protected.</p> |
