发明名称 |
ZnO COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE USING A-SURFACE SAPPHIRE SUBSTRATE, AND MANUFACTURING METHOD THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide an element that obtains a ZnO-family compound semiconductor with superior crystallizability, and uses the ZnO-family compound semiconductor such as a semiconductor light-emitting device, where the characteristics of the element have been improved. SOLUTION: A ZnO-family compound semiconductor layer 2 is subjected to epitaxial growth on the main surface (A surface) of a sapphire substrate 1, using a surface orthogonally crossing the horizontal surface of the sapphire substrate 1, for example, the A surface (11-20) as the main surface. When a semiconductor light-emitting device is to be constituted lamination is successively made so that a light emission layer formation part for pinching an active layer with smaller band gap than a clad layer is composed of an n-type cladding layer consisting of, for example, the ZnO compound semiconductor layer and a p-type cladding layer. |
申请公布号 |
JP2001044500(A) |
申请公布日期 |
2001.02.16 |
申请号 |
JP19990211223 |
申请日期 |
1999.07.26 |
申请人 |
AGENCY OF IND SCIENCE & TECHNOL;ROHM CO LTD |
发明人 |
NIKI SAKAE;PAUL FONSU;IWATA HIROYA;TANABE TETSUHIRO;NAKAHARA TAKESHI |
分类号 |
H01L21/363;H01L21/365;H01L33/14;H01L33/16;H01L33/28;H01L33/42;H01L37/02;H01L41/316;H01L41/39;H01S5/327 |
主分类号 |
H01L21/363 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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