| 摘要 |
PROBLEM TO BE SOLVED: To provide a development processing method for making the development processing uniform in a substrate surface. SOLUTION: In a process S4 of the development processing method, supply of developer is stopped, speed of a wafer W is set to 1,000 rpm, amount of the mixed liquid of demineralized water on the wafer W and the developer is reduced by centrifugal force, and at the same time, a uniform thin film of the mixed liquid of demineralized water and the developer is formed on the wafer W. After that, in a process S5, the developer is supplied to the wafer W for developing in a process S6. The thin film is formed in the process S4, thus eliminating unevenness in the concentration of the mixed liquid on the entire surface of a substrate, and development processing is made uniformly in the surface of the substrate. |
