| 摘要 |
PROBLEM TO BE SOLVED: To prevent unnecessary film formation when an insulating film is formed on the surface of silicon by plasma CVD film growth method. SOLUTION: In a plasma film growth method, a substrate 1 to be processed is placed on the electrode 24 provided within the plasma processing chamber 25 of a plasma processor 20, and non-film growing carrier gas is supplied into the plasma processing chamber 25 while exhausting the interior, so that the interior of the plasma processing chamber 25 keeps a prescribed pressure, and the substrate 1 to be processed is heated, and the gas to be supplied to the plasma processing chamber 25 is switched over to the mixed gas, where film- growing gas is added into the non-film-growing carrier gas, and also electrodes 22 and 24 are supplied with high frequency to generate plasma within the plasma processing chamber 2, whereby a desired film is grown on the surface of the substrate 1 to be processed.
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