| 摘要 |
PROBLEM TO BE SOLVED: To obtain an HEMT(high electron mobility transistor) having a good characteristic, such as a high mobility, etc., by forming a steep hetero-interface by improving the planarity of InGaAs channel layer. SOLUTION: In a method for manufacturing epitaxial wafer, an epitaxial wafer for a field-effect transistor, having such a structure that a buffer layer 2, is provided on a semi-insulating GaAs substrate 1, and an InGaAs channel layer 3 and a carrier supply layer 4 are provided on the buffer layer 2 is manufactured by the MOVPE method. The channel layer 3 is grown, using a group V organo-metallic material, preferably, TMAs in addition to an organo metallic indium material, an organo-metallic gallium material, and arsine.
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