| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain stable output by forming a wavelength converting part at a position apart from the exit face of light with the distance of equal to or larger than the thickness of a submount. SOLUTION: The wavelength conversion device having a wavelength converting part converts the basic waves emitted from a semiconductor laser device 14 into second harmonic waves having 1/2 wavelength in the inversion domain part 16 of the wavelength converting element 18 and emits the converted light. The wavelength converting element 18 is produced by forming a periodical domain inversion structure and a waveguide 17 extended along the periodical domain inversion structure on a substrate 15 consisting of a crystal such as LiNbO3 which is a ferroelectric material having a nonlinear optical effect and which is doped with MgO. The periodical domain inversion structure is produced by periodically forming a inversion domain portion 16 in which the direction of the spontaneous polarization of the crystal is periodically inverted. The wavelength converting part of the wavelength converting element 18 is formed at a position apart from the exit face of light of the semiconductor laser device 14 with the distance equal to or larger than the thickness of the submount. Thereby, influences of the heat generated by the semiconductor laser device 14 can be neglected.</p> |
