| 摘要 |
PROBLEM TO BE SOLVED: To improve integration and simplify wiring by forming a plurality of optical semiconductor elements of different light emitting or receiving wavelength regions on the same plane, inside a unit picture element surface by using a selective regrowth technique. SOLUTION: Selective regrowth is carried out by using an SiN film 25, and a sidewall 26A formed of SiN as a mask by applying an MOCVD method and a buffer layer 22A, an active layer 23A consisting of a multiquantum well and an electrode formation layer 24A are formed inside a recess 22A for a second optical semiconductor element. A material for each semiconductor layer which is subjected to selective growth which does not vary from that of the buffer layer 22, the active layer 23 and the electrode formation layer 24A which are made to grow in advance. As for the layer thickness, the active layer 23A differs slightly and others are almost the same. Since the active layer 23A alone is constituted, so that a transition wavelength between sub-bands generated in a valance band and a conduction band in a well layer so as to match the desired wavelength region, the thickness of a well layer is made different from that of a well layer in the active layer 23. |
