| 摘要 |
PROBLEM TO BE SOLVED: To reduce fluctuation in the threshold of a field-effect transistor provided with a III-V compound semiconductor layer comprising In, for improved reliability. SOLUTION: On a semiconductor substrate 1, a carrier travel layer comprising a III-V compound semiconductor is formed. A carrier supply layer is formed on the carrier travel layer. The carrier supply layer provides an interface between the carrier supply layer and carrier travel layer with a carrier for generating two-dimensional carrier gas. The carrier supply layer is formed of the III-V compound semiconductor comprising In as group III elements. A gate electrode 15 is provided above a partial region of the carrier supply layer. An intermediate layer 6 is provided between the gate electrode 15 and the carrier supply layer. The intermediate layer 6 is formed of the III-V compound semiconductor, comprising no In as group III elements Ohmic electrodes 10A and 10B are provided on both sides of the gate electrode 15.
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