| 摘要 |
PROBLEM TO BE SOLVED: To prevent peeling of a protective film, which occurs when a semiconductor substrate the surface of which is coated with an electrically insulating hard film is cut by dicing, etc. SOLUTION: In a method for cutting a semiconductor substrate, two parallel grooves 22 and 24 are formed in a dicing area 20 in the peripheral section of the chip of a GaAs substrate 10 by etching. Then an SiO2 film is formed on the surface of the substrate 10 as a surface protective film 26. When the film 26 is formed, bent sections 28 are formed at the boundaries between the protective film 26 in the grooves 22 and 24 and the protective film 26 on the surface of the substrate 10. When dicing the substrate 10, the centers of the grooves 22 and 24 are cut using a blade. When dicing the substrate 10, stresses applied on the protective film 26 and generated at the edges of the dicing line concentrate to the bent sections 28 at the boundaries between the surface of the substrate 10, and groove sections and cracks are formed along the bent sections 28.
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