| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of cutting a substrate capable of protecting device structure, formed on a semiconductor wafer and of cutting the wafer in a clean condition. SOLUTION: After the surface of a substrate 5, which is fastened on a fixing stage 6 by vacuum chucking, is covered with a layer 4 of dry ice powder, cutting is performed while blowing fine grains 2 of dry ice from a nozzle 3 onto the neighborhood of the part where the substrate 5 is cut by a dicing saw 1. Thereby, the substrate 5 is cut while its surface is protected, and after completion of the cutting, blowing fine grains 2 of dry ice from the nozzle 3 removes scraps together with the layer 4 of dry ice.
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