| 摘要 |
PROBLEM TO BE SOLVED: To reduce fluctuation and enhance reliability by using harmonies of Nd: YAG laser as the laser beam on the occasion of radiating the pulse laser beam to a semiconductor film to crystallize the semiconductor film. SOLUTION: A TFT having an offset region is manufactured and moreover a source/drain region is re-crystallized using a gate electrode as a mask with the laser annealing method. As the laser beam, the fourth harmonic of Nd: YAG laser excited with a xenon lamp (wavelength: 265 nm, pulse width: 150 nsec) is used. Energy density is 250 mJ/cm2 and number of shots is 10. As an interlayer insulator, silicon oxide is formed with the RF plasma CVD method. At the time of radiation of the laser, when the substrate is heated up to 300 to 400 deg.C, for example, to 350 deg.C, the silicon film of high mobility can be obtained with good reproducibility. |
