| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device performing high speed operation and stable read-out/write-in operation. SOLUTION: This semiconductor memory device has two pre-charge circuits 413, 414 positioned at both ends of a pair of global input/output lines, the two pre-charge circuits are selectively operated by read-out and write-in operation. Therefore, at the time of read-out/write-in operation of banks 400, 401 arranged at a position being far from a data input/output buffer 412, a waveform having steep tilt of pre-charge is obtained, not only high speed data processing operation can be secured, but data loss can be prevented.
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