| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where drop of a breakdown- strength is prevented at a low cost. SOLUTION: On a p-substrate which is a p-type high-resistance semiconductor substrate, an n+ layer which is to be a source region 5 and a drain region 6, a p-base region 2 in which, containing the source region 5, a channel part is formed on the side of drain region 6, an n-type n-offset region 3, which contains the drain region 6, expanded to the side of source region 5, a p-offset region 4 of p-type which is formed on the surface side of the n-offset region 3 (fixed to a source electric potential), a field oxide film 8 formed on the p- offset region 4, a gate oxide film 7 formed on the channel part, gate electrode 9 on the gate oxide film 7, source electrode 11 on the source region 5, drain electrode 12 on the drain region 6, interlayer film 13, and protective film 14 are provided. On the field oxide film 8, a single spiral thin-film layer 10 formed of polysilicon is provided, with one end connected to the drain electrode 12, while the other end connected to the source electrode 11. The thin-film layer is constituted of a p-n diode. |
