发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY
摘要 PROBLEM TO BE SOLVED: To reduce the occurrence of development defects by incorporating a resin containing one of specified groups each containing an alicyclic hydrocarbon structure and increasing its alkali solubility under the action of an acid and a fluorine- and/or silicon-containing surfactant. SOLUTION: This positive type photoresist composition contains a compound which generates an acid when irradiated with active light or radiation, a resin containing at least one of groups of formulae I and II each containing an alicyclic hydrocarbon structure and increasing its alkali solubility under the action of the acid and a fluorine- and/or silicon-containing surfactant. In the formulae I and II, R1 is methyl, ethyl or the like, ZA is an atomic group required to form an alicyclic hydrocarbon group together with C, R2 and R3 are each 1-4C linear or branched alkyl and ZB is a di- or trivalent alicyclic hydrocarbon group.
申请公布号 JP2001042535(A) 申请公布日期 2001.02.16
申请号 JP19990211370 申请日期 1999.07.26
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;SHIRAKAWA KOJI;AOSO TOSHIAKI
分类号 H01L21/027;C08F20/28;C08K5/00;C08L83/04;C08L101/06;G03F7/004;G03F7/039 主分类号 H01L21/027
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