FORMATION OF PATTERN OF MAGNETORESISTANCE ELEMENT AND MAGNETORESISTANCE ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To obtain a method for forming a pattern of magnetoresistance element in which the magnetoresistance effect of a magnetoresistance element changes little at removed of a photoresist pattern and a magnetoresistance element which exerts high magnetoresistance effect. SOLUTION: A method for forming pattern of magnetoresistance element includes a process of forming a magnetoresistance thin film 42 on the upper surface of an insulating substrate 41 and an inorganic thin film 42, which is thinner than the film 42 on the upper surface of the film 42, a step of forming a coated photoresist film on the upper surface of the thin film 43, and a step of forming a photoresist pattern 44 by partially removing the photoresist film. The method also includes a step of removing the exposed thin films 43 and 42 and a step of removing the photoresist pattern 44 through oxygen plasma treatment.