| 摘要 |
PROBLEM TO BE SOLVED: To suppress temperature fluctuations in the wavelength of laser oscillation by employing a mixed crystal of GaInNAs in an active layer and a III-IV compound semiconductor in a clad layer. SOLUTION: At least a part of an active layer 103 is made a mixed crystal of GaxIn1-xNyAs1-y contains nitrogen, as well as clad layers 102, 104 is made a III-V semiconductor containing nitrogen. Preferably, the clad layers 102, 104 comprise Al1-x-yGaxInyNzAs1-z, Al1-x-yGaxInyNzP1-z or GaxIn1-xNyAszP1-x-y. Since the clad layers 102, 104 comprise a III-IV semiconductor containing nitrogen and lattice matching can be taken with a GaAs substrate, crystal quality deteriorating due to lattice matching is not caused. Furthermore, the temperature dependence of the oscillation wavelength of laser is reduced, because temperature dependence of the band gap and refractive index is low in the active layer 103 and the clad layers 102, 104.
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