发明名称 PRODUCTION OF SELF-STANDING ULTRATHIN SILICON WAFER
摘要 PROBLEM TO BE SOLVED: To enhance physical safety in the ultrathin region of a wafer, by removing silicon from one surface of a wafer selectively to provide one or more ultrathin regions and leaving a selected part on the wafer surface, in order to structurally support the ultrathin region. SOLUTION: A large quantity of silicon is removed from a silicon wafer 2 by a mechanical or physical means to leave silicon 3 of desired width. A mask is formed on the rim of the wafer through dry processing, such as silicon plasma etching, or wet etching to form a wafer having ultrathin central part and a thicker annular part. The ultrathin region has a thickness in the range of 1-250 microns. A support ring has a thickness, corresponding to the thickness of an original plate of wafer, i.e., 500-800 micron, and the rim has a thickness set to 2-800 times that of the ultra-thin region being supported.
申请公布号 JP2001044088(A) 申请公布日期 2001.02.16
申请号 JP20000174947 申请日期 2000.06.12
申请人 INTERSIL CORP 发明人 MORCOM WILLIAM;SPINDLER JEFFREY;AHRENS STEPHEN;FORD RAYMOND;LAUFFER JEFFREY
分类号 H01L21/302;H01L21/02;H01L21/306;H01L21/3065;H01L21/308;H01L21/336;H01L21/76;H01L29/78;(IPC1-7):H01L21/02 主分类号 H01L21/302
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