| 摘要 |
SOI substrate inspection, by etching a dielectric layer (20) through a perforated thermally oxidized or heat treated semiconductor layer (10), is new. A semiconductor substrate inspection process comprises subjecting a substrate (1), comprising a dielectric layer (20) bearing a semiconductor layer (10) which has a bare surface (10S) on the opposite side from the dielectric layer, to either (a) thermal oxidation of the bare semiconductor layer surface to form a thermal oxide film, etching of the thermal oxide film and etching of the dielectric layer through the perforated thermal oxide film; or (b) thermal treatment of the semiconductor substrate, isotropic etching of the bare semiconductor layer surface and etching of the dielectric layer through the perforated semiconductor layer. |
