| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable barrier film by introducing a mixed gas of carrier gas and high-purity titanium tetra-chloride into a reactor from a vaporizer, and heating a TiN film formation substrate in the reactor to a desired temperature for generating plasma in it. SOLUTION: A titanium tetra-chloride supply device 17 comprises a vessel body 10 of stainless steel whose inside surface is electrolytically polished and a lid part 19 which is provided a titanium tetra-chloride injection opening 12, a supply opening, and an optical liquid-level sensor 13. Firstly, the high-purity titanium tetra-chloride which is a material is fed in the vessel body 10 through the injection opening 12, and the titanium tetra-chloride is fed in a carburetor 4 from the vessel body 10 through the supply opening 11. Then, Ar which is carrier gas is blown into the vaporizer 4 so that a mixed gas is introduced into a reactor 5 while ammonium is blown-in as a nitrogen mixed gas. A high- frequency voltage is applied from a matching unit 3 to generate plasma in the reactor 5 to form a TiN film. |
