| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor dynamic quantity sensor which is capable of stable outputting, even if an operation environment changes. SOLUTION: A silicon thin film is arranged on a support board 5 through the intermediary of an insulating film, and a beam structure 10 equipped with an overlap 15 and movable electrodes 16 and 17 and cantilever beam structures 11 and 12 each equipped with fixed electrodes 20 ad 24, are formed and partitioned on the silicon thin film. The movable electrodes 16 and 17 formed on the overlap 15 of cantilever structure, and the stationary electrodes 20 and 24 of cantilever structure are arranged confronting each other. Through-holes 23a, 23b, 27a, and 27b are provided to the stationary roots 22 and 26 of the stationary electrodes 20 and 24, a width W1 of the roots 22 and 26 is set smaller than a width W2 of the Stationary electrodes 20 and 24, so that the warpage of the support board 5 is restrained from being transmitted to the stationary electrodes 20 and 24 of cantilever structure. |
