发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To give the same characteristics to a prescribed transistor, which is formed on a chip main body region, and a transistor for an IPC-TEG, which is formed on a scribed line region in a state corresponding to this transistor. SOLUTION: An active region 22b for forming an IPC-TEG is arranged on a scribed line region 12, in such a way that the periphery of the region 22 is encircled with a plurality of narrow dummy trenches 20b, a plurality of narrow dummy trenches 20c are formed on the remaining scribed line region 12, and a multitude of rectangular dummy active regions 22c are insularly provided on the excess scribed line region 12. For this, an active area ratio in this region 12 is set almost equal to that in a circuit forming region 16 of a chip main body region 10.
申请公布号 JP2001044276(A) 申请公布日期 2001.02.16
申请号 JP19990216796 申请日期 1999.07.30
申请人 SONY CORP 发明人 GOCHO TETSUO
分类号 H01L21/76;H01L21/301;(IPC1-7):H01L21/76 主分类号 H01L21/76
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