发明名称 THERMOELECTRIC SEMICONDUCTOR AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To obtain a thermoelectric semiconductor having superior thermoelectric performance and its manufacture. SOLUTION: This is a theremoelectric semiconductor, made of ceramics and molded by using as a raw material particulates of, for example, ZnO of 300 nm in mean particle size and Al2O3 of 300 nm in mean article size and scaling them, so that the mol ratio is (ZnO)0.99(Al3)0.01, and then putting them in a nylon-made pot mill filled with nylon balls of 10 mm in diameter, mixing them in ethanol medium, and then uniaxially compressing with the stress of 1,200 kg/cm2. Consequently, a molding of 20 mm in diameter and 10 mm in thickness is obtained and then sintered by being held in a sintering furnace at 1,400 deg.C for 10 hours. Consequently, the particle size of the crystal constituting the thermoelectric semiconductor is set to 40 μm or smaller.
申请公布号 JP2001044520(A) 申请公布日期 2001.02.16
申请号 JP19990219830 申请日期 1999.08.03
申请人 UNITIKA LTD 发明人 TANAKA CHIKAFUMI;AMITANI KENJI;HOSHI SHINGO;TANABE KATSUYUKI
分类号 H01L35/22;C04B35/00;C04B35/495;H01L35/34 主分类号 H01L35/22
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