| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where the turn-on voltage of a thyrisor is lowered, while turning-off is assured. SOLUTION: A semiconductor device 10 comprising a thyristor, where an IGBT is to be a trigger, comprises embedded gate electrodes 40, 42, and 44. An n+ type floating emitter layer 24, p- type first base layer 22, n- type baser layer 18, n+ type buffer layer 16, and p+ type anode layer 14 constitute the thyristor. An n+ type cathode layer 32, p- type first base layer 22, n- type base layer 18, n+ type buffer layer 16, and p+ type anode layer 14 constitute an IGBT. At turn-on of the thyristor, a channel region is formed at a p- type second base layer 26 near the gate electrodes 40, 42, and 44. The current in the thyristor flows a path: a n+ type floating emitter layer 24-channel region-n+ type cathode layers 28, 30, and 32.
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