| 摘要 |
PROBLEM TO BE SOLVED: To improve the yield and reliability of a semiconductor integrated circuit device by improving the planarity of an insulating film on metal interconnections formed by a CMP(Chemical mechanical polishing) method, and suppressing short circuits of the metal interconnections formed by the CMP method. SOLUTION: In a process step where a sacrificial film 16 is formed on an insulating film 11b and interconnections buried in grooves 15 formed of the films 11b and 16 are formed by deposition of a titanium nitride film 14b (barrier film) and a conductive film 18, such as a copper film and polishing using a CMP method, the film 16 which is polished at a speed higher than for the film 18 is polished at the same time. The film 16 is formed by implanting boron ions into the surface of the film 11b.
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