| 摘要 |
PURPOSE: A complete complementary metal-oxide-semiconductor(CMOS) static random access memory(SRAM) cell is provided to increase an operating speed, by maximizing a pitch of a bit line. CONSTITUTION: The first and second active regions(3a,3b) are formed in a semiconductor substrate. A word line(5w) crosses the first and second regions in the second active region. The first and second gate electrodes(5a,5b) are in parallel with each other and disposed in a direction perpendicular to the word line while crossing the first and second active regions. A power line is disposed in parallel with the word line, electrically connected to the first common source region composed of the first active region between the first and second gate electrodes. A ground line is disposed in parallel with the word line, electrically connected to the second source region composed of the second active region between the first and second gate electrodes. The first and second bit lines are in parallel with each other and disposed in a direction perpendicular to the word line.
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