| 摘要 |
PURPOSE: A method for patterning an interconnection of a semiconductor device is to prevent a pin hole in the sequent process from being generated by a topology of a pattern. CONSTITUTION: A method for etching a semiconductor device comprises the steps of: forming a lower layer(21) on a substrate(20); forming a buffer layer, an interconnection layer, an arc layer in this sequence on the lower layer; and forming a remaining interconnection pattern consisting of an arc layer(250), a remaining interconnection layer(240) and a remaining buffer layer(220) by patterning the arc layer, the interconnection, and the buffer layer by a main etchant and an auxiliary etchant including an element capable of forming an etching stopper film. The interconnection layer is formed of an aluminum, and the lower layer is formed of an oxide film. The main etchant is a chlorine, the auxiliary etchant is an oxygen, and the buffer layer is a silicon. A barrier layer(230) is formed between the interconnection and the buffer layer.
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