METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of a semiconductor device is to successively etch a photoresist layer and a low permittivity dielectric layer, thus to simplify the manufacturing process and to reduce manufacturing cost. CONSTITUTION: A manufacturing method comprises the steps of: forming an interlayer insulation layer(43) on a semiconductor substrate(41) having a certain base structure; forming a metal interconnect(45) on an upper portion of the interlayer insulation layer; forming a low permittivity dielectric layer(47) and a photoresist layer(49) for silylation on the metal interconnect; exposing the surface of the photoresist layer using a via contact as an exposing mask; developing the photoresist layer in two steps to change the unexposed portion to a silicon oxide layer; and etching the photoresist layer and dielectric layer to form a contact hole for exposing the metal interconnect.