发明名称 |
Programming method for flash memory element involves sequentially programming selected memory cells until threshold voltage is reached that is lower than target threshold voltage |
摘要 |
The flash memory element programming method involves selecting at least two memory cells in a first step and sequentially programming the selected memory cells in a first time interval in a second step until a first threshold value is reached that is lower than a target threshold voltage. An Independent claim is also included for a flash memory element.
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申请公布号 |
DE10034743(A1) |
申请公布日期 |
2001.02.15 |
申请号 |
DE20001034743 |
申请日期 |
2000.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, DOO-SUP |
分类号 |
G11C16/02;G11C16/12;(IPC1-7):G11C16/10 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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