发明名称 PHOTORESIST COMPOSITION CONTAINING SILICON
摘要 PURPOSE: A photoresist composition comprising a polymer and a photoacid generator is provided, which is suitable for a bilayer process and has high thermal stability causing no decomposition even at a temperature higher than glass transition temperature and improved wettability to a developing solution and adhesion to a substrate. CONSTITUTION: This photoresist composition comprises a polymer of formula 1 having a weight average molecular weight of 3,000 to 50,000 and 1 to 15% by weight of a photoacid generator based on the polymer. The photoresist can further contain 0.01 to 2.0% by weight of an organic base based on the weight of the polymer. In formula, R1 is H or methyl; R2 is H or a C1-4 hydrocarbon compound. w, x, y, z are all an integer; w/(w+x+y+z) is 0.1 to 0.5; x/(w+x+y+z) is 0.5 to 0.7; y/(w+x+y+z) is 0.0 to 0.2 and z/(w+x+y+z) is 0.0 to 0.3.
申请公布号 KR20010011604(A) 申请公布日期 2001.02.15
申请号 KR19990031058 申请日期 1999.07.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, SANG JUN;LEE, SI HYEONG;WOO, SANG GYUN
分类号 G03F7/075 主分类号 G03F7/075
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