| 摘要 |
PURPOSE: A phase change optical disk is provided to have layers formed by materials reducing jitter value and repressing the generation of crosstalk when overwriting. CONSTITUTION: A first dielectric layer(120) of a phase change optical disk(100) is formed by Al2O3. An interference layer(130) is formed by 8nm of Al. Second/third dielectric layers(140,160) are formed by 55/20nm of ZnS-SiO2. A record layer(150) is formed by 2nm of Ge2Sb2Te5. A reflect layer(170) is formed by 100nm of Al. In case of thickness of the first dielectric layer being 30-66nm, optical absorb ratio of the record layer at crystalline/amorphous states is over 1.2. Thus, optical reflect rates and optical absorb ratio of the record layer are adjusted according to thickness of the first dielectric layer. |
