METHOD FOR ETCHING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for etching a semiconductor device is to precisely regulate critical dimension of a bottom conductive layer upon etching using an anti-reflective layer as an etching mask, thus to form a micropattern. CONSTITUTION: A method for etching a semiconductor device comprises the steps of: successively depositing the first insulation layer(212), a conductive layer(214) and the second insulation layer(216) on a semiconductor substrate(210); forming a photoresist pattern on the second insulation layer; etching the second insulating layer in certain etching atmosphere using the photoresist pattern as an etching mask, so as to form a hard mask; and etching the conductive layer and the first insulating layer using the hard mask as an etching mask, the second insulating layer being an anti-reflective layer.