SYSTEM FOR CONTROLLING UNIFORMITY OF ION BEAM IN ION IMPLANTATION DEVICE

摘要

PURPOSE: A uniformity control system of an ion beam is to prevent a process defective accident by sensing that the ion beam is moved to left and right edges of a wafer and rapidly stopping an operation of equipment when an X-scanning on entire surface of the wafer is impossible. CONSTITUTION: A system for controlling uniformity of an ion beam from an ion implantation device comprises: a scan plate(20) for X-scanning the ion beam; an acceleration column(30) for increasing an energy of the ion beam; a travelling faraday cup(40) for sensing the ion beam processed at the acceleration column at one side of a wafer(1); an ion beam sensor(70) for sensing the ion beam processed at the acceleration column at an opposite side of the wafer; and a dose integrator(41) for inputting the signal transmitted from the ion beam sensor and the travelling faraday cup and sensing an inflow amount of ion beam. The wafer is moved vertically by a linear motor(50) to Y-scan the ion beam on entire surface of the wafer.