| 摘要 |
According to one example embodiment, the present invention is directed to a semiconductor device, wherein the device includes a transistor having source and drain regions separated by a channel region. The device includes a gate formed over the channel region and formed over part of the source region and over part of the drain region. The device further includes an insulator region configured and arranged to insulate the gate from the channel region and from the source and drain regions. The insulator region has a first material arranged over the channel region and providing a high dielectric constant, and has a second material arranged over part of the source region and over part of the drain region and providing a significantly lower dielectric constant. By using insulator materials having different dielectric constants, this embodiment not only meets the compact size requirements of higher-functioning devices, but also adequately insulates the gate and channel regions and improves the transistor performance. |
