| 摘要 |
PURPOSE: A new photoresist compound having etching resistance, heat resistance and adhesive properties and capable of developing in a tetramethylammoniumhydroxide aqueous solution and photoresist composition using the same are provided, which can be effectively used in a lithography process using a light source in an area of a deep ultraviolet rays in the manufacture of a fine circuit of highly integrated semiconductor elements. CONSTITUTION: The photoresist copolymer of formula 1 having a molecular weight of 3,000 to 100,000 is prepared by a process consisting of: dissolving monomers consisting of the polymer in an organic solvent; adding a polymerization initiator to the resulting solution; and reacting the resulting solution in a nitrogen or argon atmosphere. The photoresist composition contains the photoresist resin, a crosslinking agent, a photoacid generator and an organic solvent. The organic solvent is selected from tetrahydrofuran, toluene, benzene, methylethylketone and dioxane. |
