发明名称 Production of semiconductor wafer comprises simultaneously polishing the front and rear sides of wafer between rotating polishing plates using an alkaline polishing sol and then an alcohol, cleaning, drying and applying an epitaxial layer
摘要 Production of semiconductor wafer comprises simultaneously polishing the front and rear sides of wafer between rotating polishing plates using an alkaline polishing sol and then an alcohol, cleaning, drying and applying an epitaxial layer. Production of a semiconductor wafer comprises: simultaneously polishing the front and rear sides of the wafer between rotating polishing plates with the introduction of an alkaline polishing sol, where the wafer lies in a recess of the rotor plate, whose thickness is around 2-20 mu m less than the thickness of the finished polished wafer; simultaneously treating the front and rear sides of the wafer between rotating polishing plates with the introduction of a liquid containing 2-6 C alcohols; cleaning and drying the wafer; and depositing an epitaxial layer onto the front and rear sides using the above three steps.
申请公布号 DE19938340(C1) 申请公布日期 2001.02.15
申请号 DE1999138340 申请日期 1999.08.13
申请人 WACKER SILTRONIC GESELLSCHAFT FUER HALBLEITERMATERIALIEN AG 发明人 MESMANN, KLAUS;WENSKI, GUIDO;ALTMANN, THOMAS;FUERFANGER, MARTIN;HEIER, GERHARD;SIEBERT, WOLFGANG
分类号 C30B29/06;B24B37/04;H01L21/02;H01L21/205;H01L21/304;H01L21/306;(IPC1-7):H01L21/302;H01L21/20 主分类号 C30B29/06
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